Jednostki organizacyjne

USOS

Publikacje pracowników ZFCS z ostatnich 5 lat

 

2015

1.    J. Wróbel, Ł. Ciura, M. Motyka, F. Szmulowicz, A. Kolek, A. Kowalewski Moszczyński, M. DyksikMadejczyk, S. Krishna, and A. Rogalski, “Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices,” Semiconductor Science and Technology, vol. 30, no. 11115004, Nov. 2015.
2.    A. Rogalski, “Type-II superlattice HOT infrared photodetectors,” presented at the 3rd International Workshop on Opportunities and Challenges in Mid-infrared Laser-based Gas Sensing, Wurzburg Niemcy, 2015.
3.    A. Rogalski, “New concepts in infrared photodetector designs,” presented at the Microelectronics Technology, Circuits, and Systems for Space Applications Workshop, Istanbul, Sabanci University, 2015.
4.    J. Pawluczyk, J. Piotrowski, W. Pusz, A. Koźniewski, Z. Orman, W. Gawron, and A. Piotrowski, “Complex Behavior of Time Response of HgCdTe HOT Photodetectors,” Journal of Electronic Materials, vol. 44, no. 9, p. 3163–3173, Sep. 2015.
5.    P. Martyniuk, W. Gawron, D. Stępień, J. Pawluczyk, A. KębłowskiMadejczyk, M. Kopytko, and A. Koźniewski, “Status of long-wave Auger suppressed HgCdTe detectors operating > 200 K,” Opto-Electronics Review, vol. 23, no. 4, Jan. 2015.
6.    P. Martyniuk, “HOT mid-wave HgCdTe nBn and pBp infrared detectors,” Optical and Quantum Electronics, vol. 47, no. 6, p. 1311–1318, Jun. 2015.
7.    P. Martyniuk and A. Rogalski, “MWIR barrier detectors versus HgCdTe photodiodes,” Infrared Physics & Technology, vol. 70, p. 125–128, May 2015.
8.    P. Martyniuk, W. Gawron, D. Stępień, J. Pawluczyk, A. KębłowskiMadejczyk, M. Kopytko, and A. Koźniewski, “Status of long-wave Auger suppressed HgCdTe detectors operating > 200 K,” Opto-Electronics Review, vol. 23, no. 4, Jan. 2015.
9.    M. Kopytko and A. Rogalski, “HgCdTe barrier infrared detectors,” presented at the 13th International Workshop on Advanced Infrared Technology and Applications (AITA 2015), Pisa 2015, 2015.
10.    M. Kopytko, A. Kębłowski, W. GawronMartyniukMadejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski, “MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation,” Baltimore, 2015.
11.    M. Kopytko, A. Kębłowski, W. GawronMartyniukMadejczyk, K. Józwikowski, A. Kowalewski, O. Markowska, and A. Rogalski, “MOCVD grown HgCdTe barrier detectors for MWIR high-operating temperature operation,” Optical Engineering, vol. 54, no. 10105105, Oct. 2015.
12.    M. Kopytko and K. Jóźwikowski, “Generation-Recombination Effect in MWIR HgCdTe Barrier Detectors for High-Temperature Operation,” IEEE Transactions on Electron Devices, vol. 62, no. 7, p. 2278–2284, Jul. 2015.
13.    M. Kopytko, J. Wróbel, K. Jóźwikowski, A. Rogalski, J. Antoszewski, N. D. Akhavan, G. A. Umana-Membreno, L. Faraone, and C. R. Becker, “Engineering the Bandgap of Unipolar HgCdTe-Based nBn Infrared Photodetectors,” Journal of Electronic Materials, vol. 44, no. 1, p. 158–166, Jan. 2015.
14.    M. Kopytko, A. Kębłowski, W. GawronMartyniukMadejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski, “MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation,” SPIE 9451, Infrared Technology and Applications XLI p. 945117, June 4, 2015.
15.    M. Kopytko, A. Kębłowski, W. Gawron, and P. Madejczyk, “Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors,” Opto-Electronics Review, vol. 23, no. 2, Jan. 2015.
16.    K. Jόzwikowska, A. Jόzwikowska, and M. Nietopiel, “The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions,” Entropy, vol. 17, no. 6, p. 4110–4133, Jun. 2015.
17.    L. Ciura, A. Kolek, J. Wrobel, W. Gawron, and A. Rogalski, “1/f Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber,” IEEE Transactions on Electron Devices, vol. 62, no. 6, p. 2022–2026, Jun. 2015.
18.    L. Ciura, A. Kolek, Z. ZawislakPta, A. Kowalewski, O. Markowska, J. Wróbel, and A. Rogalski, “Absence of 1/f noise from diffusion and generation-recombination currents in p-i-n type-II superlattice MWIR detector,” IEE, Noise and Fluctuations (ICNF), 2015 International Conference on, p. 1–3, 2015.

2014

1.    J. Wróbel, Ł. Ciura, M. Motyka, A. Kolek, A. Kowalewski, M. Dyksik, S. Krishna, and A. Rogalski, “Investigation of deep energy levels in a mid-wavelength InAs10ML/GaSb10ML Type II superlattice,” presented at the E-MRS 2014 Fall Meeting, Warsaw University of Technology, Poland, 2014.
2.    J. Wróbel, E. Plis, W. Gawron, M. MotykaMartyniukMadejczyk, A. Kowalewski, M. Dyksik, J. Misiewicz, S. Krishna, and A. Rogalski, “Analysis of Temperature Dependence of Dark Current Mechanisms in Mid- Wavelength Infrared pin Type-II Superlattice Photodiodes,” Sensors And Materials, vol. 26, no. 4, p. 235–244, 2014.
3.    A. Rogalski, “Far-Infrared Semiconductor Detectors and Focal Plane Arrays,” in THz and Security Applications, Springer Netherlands, , p. 25–52, 2014.
4.    A. Rogalski, Infrared Detectors(Chinese Edition). Machinery Industry Press, 2014.
5.    A. Rogalski, “New trends in infrared and terahertz detectors,” presented at the Conference on Optoelectronic and Microelectronic Materials and Devices, 2014 Conference on (COMMAD), Perth Australia, p. 218–220, 2014.
6.    A. Rogalski and P. Martyniuk, “Mid-Wavelength Infrared nBn for HOT Detectors,” Journal of Electronic Materials, vol. 43, no. 8, p. 2963–2969, Aug. 2014.
7.    A. Rogalski and K. Chrzanowski, “Infrared Devices And Techniques (Revision),” Metrology and Measurement Systems, vol. 21, no. 4, Jan. 2014.
8.    W. PuszMartyniuk, A. Rogalski, W. Gawron, and D. Stanaszek, “Theoretical modelling of mercury cadmium telluride mid-wave detector for high temperature operation,” IET Optoelectronics, vol. 8, no. 6, p. 239–244, Dec. 2014.
9.    W. Pusz, A. Kowalewski, P. Martyniuk, W. Gawron, E. Plis, S. Krishna, and A. Rogalski, “Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors,” Optical Engineering, vol. 53, no. 4043107, Apr. 2014.
10.    P. Martyniuk and A. Rogalski, “Theoretical modeling of InAsSb/AlAsSb barrier detectors for higher-operation-temperature conditions,” Optical Engineering, vol. 53, no. 1017106, Feb. 2014.
11.    P. Martyniuk and A. Rogalski, “Performance comparison of barrier detectors and HgCdTe photodiodes,” Optical Engineering, vol. 53, no. 10106105, Nov. 2014.
12.    P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, and A. Rogalski, “Modeling of HOT (111) HgCdTe MWIR detector for fast response operation,” Optical and Quantum Electronics, vol. 46, no. 10, p. 1303–1312, Oct. 2014.
13.    P. Martyniuk and A. Rogalski, “Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector,” Optical and Quantum Electronics, vol. 46, no. 4, p. 581–591, Apr. 2014.
14.    P. Martyniuk and A. Rogalski, “Performance comparison of barrier detectors and HgCdTe photodiodes,” Proc. SPIE 9070, Infrared Technology and Applications XL907014, (2014).
15.    P. Martyniuk, W. Pusz, W. Gawron, D. Stępień, L. Kubiszyn, S. Krishna, and A. Rogalski, “nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation,” presented at the Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on, p. 226–229, 2014.
16.    P. Martyniuk, A. Koźniewski, A. Kębłowski, W. Gawron, and A. Rogalski, “MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions,” Opto-Electronics Review, vol. 22, no. 2, Jan. 2014.
17.    P. Martyniuk, M. Kopytko, and A. Rogalski, “Barrier infrared detectors,” Opto-Electronics Review, vol. 22, no. 2, Jan. 2014.
18.    P. Martyniuk, W. Gawron, A. Kowalewski, E. Plis, S. Krishna, and A. Rogalski, “XBn and cascade infrared detectors for mid-wave range and HOT conditions,” Journal Of Optoelectronics And Advanced Materials, vol. 16, no. 9–10, p. 1071 – 1082, 2014.
19.    P. Martyniuk, J. Antoszewski, M. Martyniuk, L. Faraone, and A. Rogalski, “New concepts in infrared photodetector designs,” Applied Physics Reviews, vol. 1, no. 4041102, Dec. 2014.
20.    A. Kowalewski, P. Martyniuk, O. Markowska, W. Gawron, and S. Krishna, “Etching influence on performance of T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates,” presented at the E-MRS 2014 Fall Meeting, Warsaw University of Technology, Poland, 2014.
21.    M. Kopytko, A. Kębłowski, W. Gawron, A. Kowalewski, and A. Rogalski, “MOCVD Grown HgCdTe Barrier Structures for HOT Conditions,” IEEE Transactions on Electron Devices, vol. 61, no. 11, p. 3803–3807, Nov. 2014.
22.    M. Kopytko, “Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers,” Infrared Physics & Technology, vol. 64, p. 47–55, May 2014.
23.    M. Kopytko, K. Jóźwikowski, and A. Rogalski, “Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode,” Solid-State Electronics, vol. 100, p. 20–26, Oct. 2014.
24.    M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, A. Martyniuk, J. Antoszewski, and L. Faraone, “Numerical analysis of fluctuation phenomena in HOT HgCdTe barrier detectors,” IEEE, p. 189–192. 2014.
25.    Ł. Ciura, A. Kolek, W. Gawron, A. Kowalewski, and D. Stanaszek, “Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System,” Metrology and Measurement Systems, vol. 21, no. 3, Jan. 2014.
26.    P. Martyniuk, “HOT HgCdTe infrared detectors,” in referat, Palma de Mallorca, Spain, 173−174, 2014.
27.    J. Pawluczyk, J. Piotrowski, W. Pusz, A. Koźniewski, M. Romanis, Z. Orman, W. Gawron, and A. Piotrowska, “Complex behaviour of time response of HgCdTe HOT Photodetectors,” in referat, Baltimore USA, 2014.
28.    W. Pusz, J. Pawluczyk, A. Koźniewski, A. Kębłowski, J. Piotrowski, A. Piotrowski, and W. Gawron, “High Operating Temperature detectors with short time constant,” presented at the XIII Krajowa Konferencja Elektroniki, Darłówko Wschodnie, 13.06-2014.
29.    A. Rogalski, “New trends in infrared and terahertz detectors,” Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on, IEEE, 218-220, 2014.

2013

1.    J. Wróbel, P. Madejczyk, and A. Rogalski, “Analysis of temperature dependence of dark current mechanisms in MWIR type-II superlattice photodiodes,” Elektronika: konstrukcje, technologie, zastosowania, vol. 54, no. 9, p. 113–116, 2013.
2.    O. Salvetti, L. A. Ronchi, C. Corsi, A. Rogalski, and M. Strojnik, “Advanced Infrared Technology and Applications,” Advances in Optical Technologies, 2013, 1–2 (2013).
3.    A. Rogalski “Photon detectors,” in Encyclopedia of Optical Engineering, 1985–2036 (2013).
4.    A. Rogalski, “Photon detectors,” in Encyclopedia of Optical Engineering, , p. 1985–2036, 2013.
5.    A. Rogalski, “HgCdTe versus Other Material Systems: A Historical Look,” in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, Society of Photo-Optical Instrumentation Engineers, 2013.
6.    A. Rogalski, “Semiconductor detectors and focal plane arrays for far-infrared imaging,” Opto-Electronics Review, vol. 21, no. 4, p. 406–426, Sep. 2013.
7.    A. Rogalski, “Performance comparison between bulk infrared detectors and low dimensional solid detectors,” in Nanotechnology. Device Applications, Studium Press LLC.chapter 8, 2013.
8.    A. Rogalski, “Achievements in development of low dimensional solid infrared detectors,” in Nanotechnology. Device Applications, Studium Press LLC. p. chapter 15, 2013.
9.    W. Pusz, A. Kowalewski, W. Gawron, E. Plis, S. Krishna, and A. Rogalski, “MWIR type-II InAs/GaSb superlattice interband cascade photodetectors,” SPIE Optical Engineering+ Applications88680M–88680M–11 (2013).
10.    P. Martyniuk, J. Wróbel, E. Plis, P. Madejczyk, W. Gawron, A. Kowalewski, S. Krishna, and A. Rogalski, “Modeling of midwavelength infrared InAs/GaSb type II superlattice detectors,” Optical Engineering, vol. 52, no. 6061307, Jan. 2013.
11.    P. Martyniuk and A. Rogalski, “Modeling of InAsSb/AlAsSb nBn HOT detector’s performance limit,” p. 87041X–87041X–9, 2013.
12.    P. Martyniuk and A. Rogalski, “Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector,” Bulletin of the Polish Academy of Sciences: Technical Sciences, vol. 61, no. 1, Jan. 2013.
13.    P. Martyniuk and A. Rogalski, “Modeling of InAsSb/AlAsSb nBn HOT detector’s performance limit,” SPIE 8704, Infrared Technology and Applications XXXIX87041X–87041X–9. (18 June 2013).
14.    P. Martyniuk and A. Rogalski, “HOT infrared photodetectors,” Opto-Electronics Review, vol. 21, no. 2, Jan. 2013.
15.    P. Martyniuk, W. Gawron, and A. Rogalski, “Detektory HOT zakresu średniej podczerwieni,” Elektronika: konstrukcje, technologie, zastosowania, 54, 10, 35-38, 2013 referat, Darłówko Wschodnie, 2013.
16.    P. Martyniuk, W. Gawron, and A. Rogalski, “Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range,” Journal of Electronic Materials, vol. 42, no. 11, p. 3309–3319, Oct. 2013.
17.    P. Martyniuk, W. Gawron, P. Madejczyk, A. Rogalski, and J. Piotrowski, “Modeling of HgCdTe LWIR detector for high operation temperature conditions,” Metrology and Measurement Systems, vol. XX, no. 2, Jan. 2013.
18.    P. Madejczyk, W. Gawron, P. Martyniuk, A. Kębłowski, A. Piotrowski, J. Pawluczyk, W. Pusz, A. Kowalewski, J. Piotrowski, and A. Rogalski, “MOCVD grown HgCdTe device structure for ambient temperature LWIR detectors,” Semiconductor Science and Technology, vol. 28, no. 10105017, Oct. 2013.
19.    M. Kopytko, A. Kębłowski, W. Gawron, P. Madejczyk, A. Kowalewski, and K. Jóźwikowski, “High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD,” Opto-Electronics Review, vol. 21, no. 4, p. 402–405, Sep. 2013.
20.    M. Kopytko and K. Jóźwikowski, “Numerical Analysis of Current–Voltage Characteristics of LWIR nBn and p-on-n HgCdTe Photodetectors,” Journal of Electronic Materials, vol. 42, no. 11, p. 3211–3216, Oct. 2013.
21.    M. Kopytko, K. Jóźwikowski, P. Madejczyk, W. Pusz, and A. Rogalski, “Analysis of the response time in high-temperature LWIR HgCdTe photodiodes operating in non-equilibrium mode,” Infrared Physics & Technology, vol. 61, p. 162–166, Nov. 2013.
22.    L. Ciura, A. Kolek, Z. Zawislak, A. W. Stadler, A. Kowalewski, P. Martyniuk, J. Wrobel, A. Rogalski, N. Gautam, E. Plis, and S. Krishna, “Low-frequency noise in type-II superlattice MWIR nBn detector,” IEEE, p. 1–4, 2013.
23.    L. Ciura, A. Kolek, A. Kowalewski, and W. Gawron, “Szumy małej częstotliwości detektorów nBn na zakres średniej podczerwieni wykonanych z supersieci II rodzaju InAs/GaSb z barierą Al0.2Ga0.8Sb,” presented at the Krajowa Konferencja Elektroniki, Darłówko Wschodnie, vol. VIII, p. 369–374, Elektronika: konstrukcje, technologie, zastosowania, 54, 11, 88-91, 2013.
24.    L. Czarnecki, M. P. Kaźmierkowski, and A. Rogalski, “Doing Hirsch proud; shaping H-index in engineering sciences,” Bulletin of the Polish Academy of Sciences: Technical Sciences, vol. 61, no. 1, Jan. 2013.
25.    P. Martyniuk, W. Gawron, W. Pusz, D. Stanaszek, J. Piotrowski, and A. Rogalski, “Modeling of HOT (111) HgCdTe MWIR Detector For Fast Response Operation,” presented at the NUSOD 2013 13th International Conference, 2013, KANADA, 2013.
26.    P. Martyniuk, W. Gawron, and A. Rogalski, “Simulation of InAsSb/AlAsSb nBnn HOT detektor’s performance limit”,” presented at the 1st Annual Conference of COST Action MP1204 & SMMO2013, Warszawa, 2013.
27.    P. Martyniuk, W. Gawron, and A. Rogalski, “Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range,” Journal of Electronic Materials, vol. 42, no. 11, p. 3309–3319, Nov. 2013.
28.    P. Martyniuk, W. Gawron, and A. Rogalski, “Detektory HOT zakresu średniej podczerwieni,” Elektronika: konstrukcje, technologie, zastosowania, vol. 54, no. 10, p. 35–38, 2013.
29.    A. Piotrowska and A. Rogalski, “Uncooled mid and longwavelength infrared detectors,” presented at the 1st Annual Conference of COST Action MP1204 & SMMO2013, Warszawa, 2013.
30.    A. Rogalski, L. A. Ronchi, C. Corsi, A. Rogalski, and M. Strojnik, “Advanced Infrared Technology and Applications,” Advances in Optical Technologies, vol. 2013, p. 1–2, 2013.
31.    A. Rogalski, “Changes in the boards of Opto-electronics review,” Opto-Electronics Review, vol. 21, no. 4, Jan. 2013.
32.    P. Martyniuk, W. Gawron, and A. Rogalski, “HOT HgCdTe barrier detectors for the mid-wave infrared range,” Journal of Electronics Materials, Volume 42, Issue 11, pp 3309-3319, November 2013

2012

1.    J. Wróbel, P. Martyniuk, and A. Rogalski, “Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes,” Advances in Optical Technologies, vol. 2012, p. 1–5, 2012.
2.    J. Wróbel, P{. Martyniuk, E. Plis, P. Madejczyk, W. Gawron, S. Krishna, and A. Rogalski, “Dark current modeling of MWIR type-II superlattice detectors,” Proceedings of SPIE Volume 8353, p. 835316–835316–9, 2012.
3.    A. Rogalski, “Progress in focal plane array technologies,” Progress in Quantum Electronics, vol. 36, no. 2–3, p. 342–473, Mar. 2012.
4.    A. Rogalski, “History of infrared detectors,” Opto-Electronics Review, vol. 20, no. 3, p. 279–308, Jul. 2012.
5.    A. Rogalski, “Encyclopedia of Optical Engineering,” in Thermal Detectors, 2012.
6.    P. Martyniuk, J. Wróbel, E. Plis, P. Madejczyk, A. Kowalewski, W. Gawron, S. Krishna, and A. Rogalski, “Performance modeling of MWIR InAs/GaSb/B–Al 0.2 Ga 0.8 Sb type-II superlattice nBn detector,” Semiconductor Science and Technology, vol. 27, no. 5055002, May 2012.
7.    P. Martyniuk, A. Kowalewski, W. Gawron, and A. Rogalski, “Barierowe struktury detekcyjne: nowe możliwości,” Elektronika: konstrukcje, technologie, zastosowania, vol. 53, no. 11, p. 102–105, 2012.
8.    P. Madejczyk, W. Gawron, P. Martyniuk, A. Kowalewski, J. Pawluczyk, A. Piotrowski, A. Kębłowski, W. Pusz, and J. Piotrowski, “Długofalowe fotodiody z HgCdTe pracujące w temperaturach bliskich pokojowej,” Elektronika: konstrukcje, technologie, zastosowania, vol. 53, no. 10, p. 13–15, 2012.
9.    K. Jóźwikowski, M. Kopytko, and A. Rogalski, “The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys,” Journal of Applied Physics, vol. 112, no. 3033718, 2012.
10.    K. Jóźwikowski, M. Kopytko, and A. Rogalski, “Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes,” Journal of Electronic Materials, vol. 41, no. 10, p. 2766–2774, Apr. 2012.
11.    K. Jóźwikowski, A. Jóźwikowska, M. Kopytko, A. Rogalski, and L. R. Jaroszewicz, “Simplified model of dislocations as a SRH recombination channel in the HgCdTe heterostructures,” Infrared Physics & Technology, vol. 55, no. 1, p. 98–107, Jan. 2012.
12.    W. Gawron, Z. Bielecki, J. Wojtas, D. Stanaszek, J. Łach, and M. Fimiarz, “Infrared detection module for optoelectronic sensors,” Proc. SPIE, 835383532U–83532U–7,  (2012).

2011

1.    A. Rogalski, „Fundamentals of infrared detector Technologies”, Infrared Physics and Technology, vol. 54, 3136-154, May 2011.
2.    A. Rogalski, “Recent progress in infrared detector technologies,” Infrared Physics & Technology, vol. 54, no. 3, p. 136–154, May 2011.
3.    A. Rogalski and F. Sizov, “Terahertz detectors and focal plane arrays,” Opto-Electronics Review, vol. 19, no. 3, Jan. 2011.
4.    J. Piotrowski, and A. Rogalski, Infrared Detectors Second Edition, Second. CRC Press Taylor and Francis Group, 2011.
5.    P. Madejczyk, W. Gawron, A. Piotrowski, K. Kłos, J. Rutkowski, and A. Rogalski, “Improvement in performance of high-operating temperature HgCdTe photodiodes,” Infrared Physics & Technology, vol. 54, no. 3, p. 310–315, May 2011.
6.    K. Jóźwikowski, M. Kopytko, and A. Rogalski, “Numerical estimations of carrier generation-recombination processes and photon recycling effect in 3- ${\bm \mu}$ μ m n-on-p HgCdTe photodiodes,” Optical Engineering, vol. 50, no. 6061003, Jun. 2011.
7.    K. Jóźwikowski, M. Kopytko, J. Piotrowski, A. Jóźwikowska, Z. Orman, and A. Rogalski, “Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres,” Solid-State Electronics, vol. 63, 18-13, Jul. 2011.
8.    W. Gawron and A. Rogalski, “Zjawiska fotoelektryczne w złożonych heterostruturach HgCdTe stosowanych w konstrukcjach niechłodzonych detektorów podczerwieni,” Elektronika: konstrukcje, technologie, zastosowania, vol. 52, no. 10, p. 28–31, 2011.

2010

1.    W. Gawron, A. Rogalski, P. Madejczyk, J. Pawluczyk, J. Piotrowski, and A. Piotrowska, “Heterostruktury w niechłodzonych detektorach podczerwieni,” Elektronika: konstrukcje, technologie, zastosowania, vol. 51, no. 10, p. 106–109, 2010.
2.    K. Jóźwikowski, M. Kopytko, A. Rogalski, and A. Jóźwikowska, “Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes,” Journal of Applied Physics, vol. 108, no. 7074519, 2010.
3.    M. Kopytko, K. Jóźwikowski, A. Jóźwikowska, and A. Rogalski, “High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes,” Opto-Electronics Review, vol. 18, no. 3, Jan. 2010.
4.    P. Madejczyk, W. Gawron, A. Piotrowska, K. Kłos, J. Rutkowski, and A. Rogalski, “Influence of TDMAAs acceptor precursor on performance improvement of HgCdTe photodiodes,” Acta Physica Polonica-Series A General Physics, vol. 118, no. 61199, 2010.
5.    P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, J. Rutkowski, and A. Rogalski, “Control of acceptor doping in MOCVD HgCdTe epilayers,” Opto-Electronics Review, vol. 18, no. 3, Jan. 2010.
6.    A. Rogalski, “History of HgTe-based photodetectors in Poland,” Opto-Electronics Review, vol. 18, no. 3, Jan. 2010
7.    A. Rogalski, “Novel uncooled infrared detectors,” Opto-Electronics Review, vol. 18, no. 4, Jan. 2010.
8.    A. Rogalski, “Recent progress in third generation infrared detectors,” Journal of Modern Optics, vol. 57, no. 18, p. 1716–1730, Oct. 2010.
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